SCT2450KEGC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.95 EUR |
| 25+ | 12.21 EUR |
| 50+ | 11.5 EUR |
| 100+ | 10.85 EUR |
| 250+ | 10.36 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
14 Stücke
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Produktbewertung abgeben
Technische Details SCT2450KEGC11 Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 900µA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V.
Weitere Produktangebote SCT2450KEGC11 nach Preis ab 10.44 EUR bis 24.15 EUR
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SCT2450KEGC11 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2450KEGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2450KEGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2450KEGC11 | ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 1200V 450mO 2nd Gen TO-247 |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2450KEGC11 | Rohm Semiconductor |
Description: 1200V, 10A, THD, SILICON-CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 900µA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 18.42 EUR |
| 17+ | 10.67 EUR |
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 18.42 EUR |
| 17+ | 10.44 EUR |
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 21.05 EUR |
| 25+ | 15.67 EUR |
| 50+ | 14.59 EUR |
| 100+ | 13.57 EUR |
| 250+ | 12.34 EUR |
| SCT2450KEGC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 1200V 450mO 2nd Gen TO-247
SiC MOSFETs Transistor SiC MOSFET 1200V 450mO 2nd Gen TO-247
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.4 EUR |
| 10+ | 13.23 EUR |
| 100+ | 12.59 EUR |
| 450+ | 12.21 EUR |
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Description: 1200V, 10A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.15 EUR |
| 10+ | 16.8 EUR |
| 50+ | 13.66 EUR |