SCT2450KEGC11 Rohm Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 7.37 EUR |
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Technische Details SCT2450KEGC11 Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 900µA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V.
Weitere Produktangebote SCT2450KEGC11 nach Preis ab 6.7 EUR bis 20.42 EUR
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SCT2450KEGC11 | Hersteller : Rohm Semiconductor |
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auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2450KEGC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 1200V 450mohm 2nd Gen TO-247 |
auf Bestellung 527 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2450KEGC11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 10A, THD, SILICON-CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 900µA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V |
auf Bestellung 441 Stücke: Lieferzeit 10-14 Tag (e) |
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