SCT2450KEGC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 15+ | 12.02 EUR |
| 25+ | 11.34 EUR |
| 50+ | 10.67 EUR |
| 100+ | 10.08 EUR |
| 250+ | 9.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT2450KEGC11 Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 4V @ 900µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT2450KEGC11 nach Preis ab 7.56 EUR bis 24.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCT2450KEGC11 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SCT2450KEGC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
SCT2450KEGC11 | ROHM Semiconductor |
SiC MOSFETs Transistor SiC MOSFET 1200V 450mohm 2nd Gen TO-247 |
auf Bestellung 501 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SCT2450KEGC11 | Rohm Semiconductor |
Description: 1200V, 10A, THD, SILICON-CARBIDE Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 4V @ 900µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 441 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 13.22 EUR |
| 50+ | 9.5 EUR |
| 100+ | 8.23 EUR |
| 200+ | 7.56 EUR |
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 14.4 EUR |
| 25+ | 13.58 EUR |
| 50+ | 12.67 EUR |
| 100+ | 11.79 EUR |
| 250+ | 11.03 EUR |
| SCT2450KEGC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 1200V 450mohm 2nd Gen TO-247
SiC MOSFETs Transistor SiC MOSFET 1200V 450mohm 2nd Gen TO-247
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.11 EUR |
| 10+ | 15.23 EUR |
| 100+ | 11.44 EUR |
| 450+ | 11.41 EUR |
| 900+ | 11.39 EUR |
| SCT2450KEGC11 |
|
Hersteller: Rohm Semiconductor
Description: 1200V, 10A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: 1200V, 10A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.3 EUR |
| 10+ | 16.98 EUR |