SCT2H12NZGC11

Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube

Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube

Hersteller: ROHM
Description: ROHM - SCT2H12NZGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 3.7A, 1.7kV, 1.15 Ohm, 18V, 2.8V
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 3.7A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 35W
Bauform - Transistor: TO-3PFM
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1.15ohm
SVHC: Lead (23-Jan-2024)

Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1700V 3.7A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V