SCT3030ARC14 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3+ | 66.41 EUR |
| 5+ | 62.99 EUR |
| 10+ | 59.93 EUR |
| 20+ | 57.6 EUR |
| 50+ | 55.5 EUR |
| 100+ | 53.16 EUR |
| 250+ | 52.24 EUR |
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Technische Details SCT3030ARC14 Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3030ARC14 nach Preis ab 53.16 EUR bis 92.7 EUR
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SCT3030ARC14 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3030ARC14 | ROHM |
Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3030ARC14 | Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3030ARC14 | ROHM Semiconductor |
SiC MOSFETs TO247 650V 70A N-CH SIC |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARC14 |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 66.41 EUR |
| 5+ | 62.99 EUR |
| 10+ | 59.93 EUR |
| 20+ | 57.6 EUR |
| 50+ | 55.5 EUR |
| 100+ | 53.16 EUR |
| SCT3030ARC14 |
|
Hersteller: ROHM
Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 262W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 262W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 67.13 EUR |
| SCT3030ARC14 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 87 EUR |
| 30+ | 61.5 EUR |
| SCT3030ARC14 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 650V 70A N-CH SIC
SiC MOSFETs TO247 650V 70A N-CH SIC
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 92.7 EUR |
| 10+ | 70.98 EUR |