SCT3060ARC14 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 650V 39A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 37.54 EUR |
| 30+ | 31.13 EUR |
| 120+ | 29.18 EUR |
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Technische Details SCT3060ARC14 Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 6.67mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V.
Weitere Produktangebote SCT3060ARC14 nach Preis ab 25.48 EUR bis 38.19 EUR
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SCT3060ARC14 | Hersteller : ROHM Semiconductor |
MOSFET 650V, 39A, 60MO, SIC FET |
auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ARC14 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W Mounting: THT Drain-source voltage: 650V Drain current: 39A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 97A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT3060ARC14 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W Mounting: THT Drain-source voltage: 650V Drain current: 39A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 97A Case: TO247-4 |
Produkt ist nicht verfügbar |