| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.26 EUR |
| 10+ | 21.3 EUR |
| 100+ | 18.47 EUR |
| 1200+ | 18.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3080KRC14 ROHM Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V.
Weitere Produktangebote SCT3080KRC14 nach Preis ab 18.78 EUR bis 34.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCT3080KRC14 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 31A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| SCT3080KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; 1.2kV; 31A; 165W; TO247-4 Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 1.2kV Drain current: 31A Power dissipation: 165W Case: TO247-4 On-state resistance: 80mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhancement |
auf Bestellung 744 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SCT3080KRC14 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.83 EUR |
| 30+ | 21.66 EUR |
| 120+ | 18.78 EUR |
| SCT3080KRC14 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 31A; 165W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247-4
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 31A; 165W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247-4
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
auf Bestellung 744 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 25.83 EUR |
| 9+ | 24.73 EUR |
| 10+ | 24.59 EUR |
| 20+ | 23.98 EUR |
| 30+ | 21.4 EUR |

