SCT3080KRHRC15 ROHM Semiconductor
Hersteller: ROHM SemiconductorSiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.17 EUR |
| 10+ | 22.18 EUR |
| 100+ | 19.17 EUR |
| 250+ | 18.57 EUR |
| 450+ | 17.37 EUR |
| 900+ | 15.93 EUR |
| 2700+ | 15.42 EUR |
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Technische Details SCT3080KRHRC15 ROHM Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V, Grade: Automotive, Qualification: AEC-Q101.
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SCT3080KRHRC15 | Hersteller : Rohm Semiconductor |
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
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