SCT3080KRHRC15 ROHM Semiconductor
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.51 EUR |
| 10+ | 16.39 EUR |
| 100+ | 13.89 EUR |
| 450+ | 12.95 EUR |
| 900+ | 11.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3080KRHRC15 ROHM Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 165W, Vgs(th) (Max) @ Id: 5.6V @ 5mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3080KRHRC15
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SCT3080KRHRC15 | Hersteller : Rohm Semiconductor |
 Description: 1200V, 31A, 4-PIN THD, TRENCH-STPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |