SCT30N120D2 STMicroelectronics
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
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Technische Details SCT30N120D2 STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: HiP247™, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tray.
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SCT30N120D2 | Hersteller : STMicroelectronics | MOSFET PTD NEW MAT & PWR SOLUTION |
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