SCT3105KLHRC11 Rohm Semiconductor

Description: SICFET N-CH 1200V 24A TO247N, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Power Dissipation (Max): 134W, Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Qualification: AEC-Q101, Packaging: Tube, Grade: Automotive.