
SCT3160KLHRC11 Rohm Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
11+ | 13.98 EUR |
25+ | 12.86 EUR |
50+ | 11.89 EUR |
100+ | 11.03 EUR |
250+ | 10.26 EUR |
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Technische Details SCT3160KLHRC11 Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 103W, Vgs(th) (Max) @ Id: 5.6V @ 2.5mA, Supplier Device Package: TO-247N, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3160KLHRC11 nach Preis ab 9.58 EUR bis 19.42 EUR
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SCT3160KLHRC11 | Hersteller : ROHM Semiconductor |
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auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KLHRC11 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 103W Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 592 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3160KLHRC11 | Hersteller : Rohm Semiconductor |
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auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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