SCT4026DW7HRTL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 30.89 EUR |
| 10+ | 23.06 EUR |
| 100+ | 20.8 EUR |
| 500+ | 20.75 EUR |
| 1000+ | 19.43 EUR |
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Technische Details SCT4026DW7HRTL ROHM Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Power Dissipation (Max): 150W, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT4026DW7HRTL nach Preis ab 20.56 EUR bis 31.86 EUR
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SCT4026DW7HRTL | Hersteller : Rohm Semiconductor |
 Description: 750V, 51A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4026DW7HRTL | Hersteller : Rohm Semiconductor |
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
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