SCT4026DW7HRTL ROHM
Hersteller: ROHM
Description: ROHM - SCT4026DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.026 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 51A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.23 EUR |
| 11+ | 20.11 EUR |
| 50+ | 19.71 EUR |
| 100+ | 19.3 EUR |
| 250+ | 18.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT4026DW7HRTL ROHM
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V, Power Dissipation (Max): 150W, Vgs(th) (Max) @ Id: 4.8V @ 15.4mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT4026DW7HRTL nach Preis ab 18.91 EUR bis 39.1 EUR
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SCT4026DW7HRTL | ROHM |
Description: ROHM - SCT4026DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.026 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 51A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4026DW7HRTL | ROHM Semiconductor |
SiC MOSFETs TO263 750V 51A N-CH SIC |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4026DW7HRTL | Rohm Semiconductor |
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 15.4mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT4026DW7HRTL |
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Hersteller: ROHM
Description: ROHM - SCT4026DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.026 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 51A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - SCT4026DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 51 A, 750 V, 0.026 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 51A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 32.99 EUR |
| 9+ | 26.23 EUR |
| 11+ | 20.11 EUR |
| 50+ | 19.71 EUR |
| 100+ | 19.3 EUR |
| 250+ | 18.91 EUR |
| SCT4026DW7HRTL |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 750V 51A N-CH SIC
SiC MOSFETs TO263 750V 51A N-CH SIC
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.18 EUR |
| 10+ | 27.1 EUR |
| 100+ | 24.78 EUR |
| 500+ | 24.59 EUR |
| 1000+ | 21.82 EUR |
| SCT4026DW7HRTL |
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Hersteller: Rohm Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.1 EUR |
| 10+ | 27.99 EUR |
| 100+ | 25.24 EUR |