SCT4036DWAHRTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1000+ | 8.45 EUR |
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Technische Details SCT4036DWAHRTL Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tj), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 115W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-263-7LA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT4036DWAHRTL nach Preis ab 9.91 EUR bis 18.73 EUR
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SCT4036DWAHRTL | Hersteller : ROHM Semiconductor |
SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036DWAHRTL | Hersteller : Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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