| Anzahl | Preis |
|---|---|
| 1+ | 28.44 EUR |
| 10+ | 25.03 EUR |
| 100+ | 21.52 EUR |
| 450+ | 19.8 EUR |
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Technische Details SCT4036KRC15 ROHM Semiconductor
Description: 1200V, 36M, 4-PIN THD, TRENCH-ST, Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Power Dissipation (Max): 176W, Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote SCT4036KRC15 nach Preis ab 19.24 EUR bis 28.56 EUR
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SCT4036KRC15 | Hersteller : Rohm Semiconductor |
 Description: 1200V, 36M, 4-PIN THD, TRENCH-STInput Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Power Dissipation (Max): 176W Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 4516 Stücke: Lieferzeit 10-14 Tag (e) |
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