SCT4036KW7TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.08 EUR |
| 10+ | 20.94 EUR |
| 100+ | 17.91 EUR |
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Technische Details SCT4036KW7TL Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 150W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-263-7L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V.
Weitere Produktangebote SCT4036KW7TL nach Preis ab 19.1 EUR bis 26.88 EUR
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SCT4036KW7TL | Hersteller : ROHM Semiconductor |
SiC MOSFETs TO263 1.2KV 40A N-CH SIC |
auf Bestellung 1115 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036KW7TL | Hersteller : ROHM |
Description: ROHM - SCT4036KW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 40 A, 1.2 kV, 0.036 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4036KW7TL | Hersteller : ROHM |
Description: ROHM - SCT4036KW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 40 A, 1.2 kV, 0.036 ohm, TO-263 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 865 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4036KW7TL | Hersteller : Rohm Semiconductor |
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
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