| Anzahl | Preis |
|---|---|
| 1+ | 22.97 EUR |
| 10+ | 17.78 EUR |
| 100+ | 16.67 EUR |
| 1000+ | 14.15 EUR |
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Technische Details SCT4036KWATL ROHM Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V, Power Dissipation (Max): 150W, Vgs(th) (Max) @ Id: 4.8V @ 11.1mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V.
Weitere Produktangebote SCT4036KWATL nach Preis ab 14.37 EUR bis 24.11 EUR
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SCT4036KWATL | Rohm Semiconductor |
 Description: 1200V, 40A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT4036KWATL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 24.11 EUR |
| 10+ | 16.99 EUR |
| 100+ | 14.37 EUR |