| Anzahl | Preis |
|---|---|
| 1+ | 19.5 EUR |
| 10+ | 13.83 EUR |
| 100+ | 12.97 EUR |
| 450+ | 11.3 EUR |
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Technische Details SCT4045DRC15 ROHM Semiconductor
Description: 750V, 45M, 4-PIN THD, TRENCH-STR, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +21V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Power Dissipation (Max): 115W, Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V.
Weitere Produktangebote SCT4045DRC15 nach Preis ab 15.81 EUR bis 22.9 EUR
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SCT4045DRC15 | Hersteller : Rohm Semiconductor |
 Description: 750V, 45M, 4-PIN THD, TRENCH-STRDrain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Power Dissipation (Max): 115W Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V |
auf Bestellung 4859 Stücke: Lieferzeit 10-14 Tag (e) |
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