SCT4045DW7HRTL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 17.69 EUR |
| 10+ | 15.52 EUR |
| 100+ | 13.02 EUR |
| 500+ | 12.72 EUR |
| 1000+ | 12.71 EUR |
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Technische Details SCT4045DW7HRTL ROHM Semiconductor
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR, Qualification: AEC-Q101, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-263-7L, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Power Dissipation (Max): 93W, Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +21V, -4V.
Weitere Produktangebote SCT4045DW7HRTL nach Preis ab 11.57 EUR bis 21.68 EUR
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SCT4045DW7HRTL | Hersteller : Rohm Semiconductor |
 Description: 750V, 31A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Power Dissipation (Max): 93W Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Supplier Device Package: TO-263-7L Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4045DW7HRTL | Hersteller : Rohm Semiconductor |
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-263-7L Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Power Dissipation (Max): 93W Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +21V, -4V |
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