SCT4045DW7HRTL ROHM
Hersteller: ROHM
Description: ROHM - SCT4045DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 31 A, 750 V, 0.045 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 31A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 93W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.045ohm
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 23.65 EUR |
| 12+ | 20.61 EUR |
| 13+ | 17.78 EUR |
| 50+ | 16.58 EUR |
| 100+ | 15.36 EUR |
| 250+ | 14.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT4045DW7HRTL ROHM
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR, Qualification: AEC-Q101, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: TO-263-7L, Vgs(th) (Max) @ Id: 4.8V @ 8.89mA, Power Dissipation (Max): 93W, Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +21V, -4V.
Weitere Produktangebote SCT4045DW7HRTL nach Preis ab 13.77 EUR bis 25.8 EUR
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SCT4045DW7HRTL | ROHM |
Description: ROHM - SCT4045DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 31 A, 750 V, 0.045 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 93W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT4045DW7HRTL | ROHM Semiconductor |
SiC MOSFETs TO263 750V 31A N-CH SIC |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4045DW7HRTL | Rohm Semiconductor |
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Power Dissipation (Max): 93W Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Supplier Device Package: TO-263-7L Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ROHM
Description: ROHM - SCT4045DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 31 A, 750 V, 0.045 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 31A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 93W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.045ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - SCT4045DW7HRTL - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 31 A, 750 V, 0.045 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 31A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 93W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.045ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 23.65 EUR |
| 12+ | 20.61 EUR |
| 13+ | 17.78 EUR |
| 50+ | 16.58 EUR |
| 100+ | 15.36 EUR |
| 250+ | 14.91 EUR |
| SCT4045DW7HRTL |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 750V 31A N-CH SIC
SiC MOSFETs TO263 750V 31A N-CH SIC
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.25 EUR |
| 10+ | 18.58 EUR |
| 100+ | 16.29 EUR |
| 500+ | 15.14 EUR |
| 1000+ | 14.35 EUR |
| SCT4045DW7HRTL |
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Hersteller: Rohm Semiconductor
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-263-7L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 31A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Supplier Device Package: TO-263-7L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.8 EUR |
| 10+ | 19.09 EUR |
| 100+ | 14.47 EUR |
| 500+ | 13.77 EUR |