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SDS120J002D3-ISARH

SDS120J002D3-ISARH Sanan Semiconductor

SDS120J002D3_ISARH-3439577.pdf Hersteller: Sanan Semiconductor
SiC Schottky Diodes 1200V 2A, TO252-2L, Industrial Grade
auf Bestellung 2444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.82 EUR
10+2.29 EUR
100+1.72 EUR
500+1.44 EUR
1000+1.28 EUR
2500+1.18 EUR
5000+1.05 EUR
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Technische Details SDS120J002D3-ISARH Sanan Semiconductor

Description: DIODE SIL CARB 1200V 11A TO2522L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 165pF @ 0V, 1MHz, Current - Average Rectified (Io): 11A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Current - Reverse Leakage @ Vr: 8 µA @ 1200 V.

Weitere Produktangebote SDS120J002D3-ISARH nach Preis ab 1.37 EUR bis 2.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SDS120J002D3-ISARH SDS120J002D3-ISARH Hersteller : Luminus Devices Inc. SDS120J002D3-ISARH.pdf Description: DIODE SIL CARB 1200V 11A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 165pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.3 EUR
100+1.73 EUR
500+1.37 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SDS120J002D3-ISARH SDS120J002D3-ISARH Hersteller : Luminus Devices Inc. SDS120J002D3-ISARH.pdf Description: DIODE SIL CARB 1200V 11A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 165pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
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