SDS120J002D3-ISARH Luminus Devices Inc.
Hersteller: Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 11A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 165pF @ 0V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 2.3 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SDS120J002D3-ISARH Luminus Devices Inc.
Description: DIODE SIL CARB 1200V 11A TO2522L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 165pF @ 0V, 1MHz, Current - Average Rectified (Io): 11A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Current - Reverse Leakage @ Vr: 8 µA @ 1200 V.
Weitere Produktangebote SDS120J002D3-ISARH nach Preis ab 0.96 EUR bis 3.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SDS120J002D3-ISARH | Hersteller : Sanan Semiconductor |
SiC Schottky Diodes 1200V 2A, TO252-2L, Industrial Grade |
auf Bestellung 2361 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SDS120J002D3-ISARH | Hersteller : Luminus Devices Inc. |
Description: DIODE SIL CARB 1200V 11A TO2522L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 165pF @ 0V, 1MHz Current - Average Rectified (Io): 11A Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 1200 V |
Produkt ist nicht verfügbar |