Produkte > SANAN SEMICONDUCTOR > SDS120J010D3-ISARH

SDS120J010D3-ISARH Sanan Semiconductor



Hersteller: Sanan Semiconductor
SiC Schottky Diodes 1200V 10A, TO252-2L, Industrial Grade
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+9.24 EUR
10+6.05 EUR
100+4.52 EUR
500+3.78 EUR
1000+3.52 EUR
2500+3.27 EUR
5000+3.19 EUR
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Technische Details SDS120J010D3-ISARH Sanan Semiconductor

Description: DIODE 1200V-10A TO252-2L, Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2L, Current - Average Rectified (Io): 37A, Capacitance @ Vr, F: 780pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote SDS120J010D3-ISARH

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
SDS120J010D3-ISARH Luminus Devices Inc. Description: DIODE 1200V-10A TO252-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 37A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS120J010D3-ISARH Luminus Devices Inc. Description: DIODE 1200V-10A TO252-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 37A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS120J010D3-ISARH
Hersteller: Luminus Devices Inc.
Description: DIODE 1200V-10A TO252-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 37A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDS120J010D3-ISARH
Hersteller: Luminus Devices Inc.
Description: DIODE 1200V-10A TO252-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2L
Current - Average Rectified (Io): 37A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH