SDS120J020H3-ISATH Sanan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 14.73 EUR |
| 10+ | 9.1 EUR |
| 120+ | 7.67 EUR |
| 510+ | 6.76 EUR |
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Technische Details SDS120J020H3-ISATH Sanan Semiconductor
Description: DIODE 1200V-20A TO247-2L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1565pF @ 0V, 1MHz, Current - Average Rectified (Io): 63A, Supplier Device Package: TO-247-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote SDS120J020H3-ISATH nach Preis ab 10.01 EUR bis 14.91 EUR
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SDS120J020H3-ISATH | Hersteller : Luminus Devices Inc. |
 Description: DIODE 1200V-20A TO247-2LPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1565pF @ 0V, 1MHz Current - Average Rectified (Io): 63A Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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