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SE100N6DHM3/I

SE100N6DHM3/I Vishay Semiconductors

se100n6d_se100n6g_se100n6j.pdf
Hersteller: Vishay Semiconductors
Rectifiers 10A,200V,STD,SMRECT,DFN6546A
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.1 EUR
10+1.92 EUR
100+1.26 EUR
500+0.99 EUR
1000+0.85 EUR
2500+0.77 EUR
6000+0.68 EUR
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Technische Details SE100N6DHM3/I Vishay Semiconductors

Description: RECTIFIER, STANDARD RECOVERY, SU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 92pF @ 4V, 1MHz, Current - Average Rectified (Io): 3.1A, Supplier Device Package: DFN6546A, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Qualification: AEC-Q101.

Weitere Produktangebote SE100N6DHM3/I

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SE100N6DHM3/I SE100N6DHM3/I Vishay General Semiconductor - Diodes Division se100n6d_se100n6g_se100n6j.pdf Description: RECTIFIER, STANDARD RECOVERY, SU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 92pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SE100N6DHM3/I SE100N6DHM3/I Vishay General Semiconductor - Diodes Division se100n6d_se100n6g_se100n6j.pdf Description: RECTIFIER, STANDARD RECOVERY, SU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 92pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SE100N6DHM3/I se100n6d_se100n6g_se100n6j.pdf
SE100N6DHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, SU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 92pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SE100N6DHM3/I se100n6d_se100n6g_se100n6j.pdf
SE100N6DHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, SU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 92pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH