SE100PWJ-M3/I Vishay General Semiconductor
auf Bestellung 4314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.80 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.53 EUR |
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Technische Details SE100PWJ-M3/I Vishay General Semiconductor
Description: DIODE GEN PURP 600V 10A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 78pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current - Reverse Leakage @ Vr: 20 µA @ 600 V, Reverse Recovery Time (trr): 2.6 µs, Voltage - DC Reverse (Vr) (Max): 600 V.
Weitere Produktangebote SE100PWJ-M3/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SE100PWJ-M3/I | Hersteller : Vishay |
 Surface-Mount ESD Capability Rectifier |
Produkt ist nicht verfügbar |
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SE100PWJ-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 10A SLIMDPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 78pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 20 µA @ 600 V Reverse Recovery Time (trr): 2.6 µs Voltage - DC Reverse (Vr) (Max): 600 V |
Produkt ist nicht verfügbar |