
SE10DGHM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
12+ | 1.51 EUR |
14+ | 1.31 EUR |
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Technische Details SE10DGHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 67pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-263AC (SMPD), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A, Current - Reverse Leakage @ Vr: 15 µA @ 400 V, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SE10DGHM3/I | Hersteller : Vishay Semiconductors |
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auf Bestellung 3498 Stücke: Lieferzeit 10-14 Tag (e) |
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SE10DGHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 67pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SE10DGHM3/I | Hersteller : Vishay General Semiconductor |
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Produkt ist nicht verfügbar |