SE10FJHM3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details SE10FJHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 780 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote SE10FJHM3/I nach Preis ab 0.11 EUR bis 0.72 EUR
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SE10FJHM3/I | Vishay General Semiconductor |
Rectifiers 1A 600V SMF Rectifier |
auf Bestellung 37614 Stücke: Lieferzeit 10-14 Tag (e) |
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SE10FJHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219AB Package / Case: DO-219AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount |
auf Bestellung 30415 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SE10FJHM3/I |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1A 600V SMF Rectifier
Rectifiers 1A 600V SMF Rectifier
auf Bestellung 37614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.16 EUR |
| 2500+ | 0.15 EUR |
| 10000+ | 0.11 EUR |
| SE10FJHM3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE GEN PURP 600V 1A DO219AB
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 30415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |