SE30AFBHM3/6A

SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division


se30afb.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.21 EUR
7000+0.20 EUR
10500+0.19 EUR
Mindestbestellmenge: 3500
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Technische Details SE30AFBHM3/6A Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 100V 1.4A DO221AC, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.4A, Supplier Device Package: DO-221AC (SlimSMA), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Qualification: AEC-Q101.

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SE30AFBHM3/6A SE30AFBHM3/6A Hersteller : Vishay General Semiconductor se30afb.pdf Rectifiers 3 Amp 100 Volts ESD PROTECTION
auf Bestellung 15318 Stücke:
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7+0.47 EUR
10+0.31 EUR
100+0.25 EUR
1000+0.22 EUR
3500+0.19 EUR
7000+0.18 EUR
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SE30AFBHM3/6A SE30AFBHM3/6A Hersteller : Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 18440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
57+0.31 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH