SE30AFJHM3J/6A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3500+ | 0.25 EUR |
| 7000+ | 0.24 EUR |
| 10500+ | 0.23 EUR |
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Technische Details SE30AFJHM3J/6A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221AC, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-221AC (SlimSMA), Current - Average Rectified (Io): 1.4A, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-221AC, SMA Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SE30AFJHM3J/6A nach Preis ab 0.33 EUR bis 1.24 EUR
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SE30AFJHM3J/6A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.4A DO221AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 19pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 12800 Stücke: Lieferzeit 10-14 Tag (e) |
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| SE30AFJHM3J/6A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1.4A DO221AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |