
SE30PABHM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
41+ | 0.43 EUR |
100+ | 0.29 EUR |
500+ | 0.23 EUR |
1000+ | 0.20 EUR |
2000+ | 0.19 EUR |
5000+ | 0.17 EUR |
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Technische Details SE30PABHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.3 µs, Technology: Standard, Capacitance @ Vr, F: 13pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote SE30PABHM3/I nach Preis ab 0.18 EUR bis 0.67 EUR
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SE30PABHM3/I | Hersteller : Vishay General Semiconductor |
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auf Bestellung 8028 Stücke: Lieferzeit 10-14 Tag (e) |
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SE30PABHM3/I | Hersteller : Vishay Semiconductors |
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auf Bestellung 13690 Stücke: Lieferzeit 10-14 Tag (e) |
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SE30PABHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
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