SE30PABHM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 3A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.3 µs, Technology: Standard, Capacitance @ Vr, F: 13pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.