SE30PABHM3/I

SE30PABHM3/I Vishay General Semiconductor - Diodes Division


se30pab.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 9268 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.20 EUR
2000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 28
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Technische Details SE30PABHM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 3A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.3 µs, Technology: Standard, Capacitance @ Vr, F: 13pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.

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SE30PABHM3/I SE30PABHM3/I Hersteller : Vishay General Semiconductor se30pab.pdf Rectifiers 3A, 100V, ESD PROTECTION, SMPA
auf Bestellung 8028 Stücke:
Lieferzeit 10-14 Tag (e)
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5+0.67 EUR
10+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.18 EUR
Mindestbestellmenge: 5
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SE30PABHM3/I SE30PABHM3/I Hersteller : Vishay Semiconductors se30pab-1128147.pdf Rectifiers 3A, 100V, ESD PROTECTION, SMPA
auf Bestellung 13690 Stücke:
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SE30PABHM3/I SE30PABHM3/I Hersteller : Vishay General Semiconductor - Diodes Division se30pab.pdf Description: DIODE GEN PURP 600V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH