SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.4A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote SE30PAJ-M3/I nach Preis ab 0.2 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SE30PAJ-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.4A DO221BC Packaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Average Rectified (Io): 1.4A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 27914 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SE30PAJ-M3/I | Vishay Semiconductors |
Rectifiers 3A, 600V, ESD PROTECTION, SMPA |
auf Bestellung 13975 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SE30PAJ-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 27914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.23 EUR |
| 5000+ | 0.2 EUR |
| SE30PAJ-M3/I |
|
Hersteller: Vishay Semiconductors
Rectifiers 3A, 600V, ESD PROTECTION, SMPA
Rectifiers 3A, 600V, ESD PROTECTION, SMPA
auf Bestellung 13975 Stücke:
Lieferzeit 10-14 Tag (e)