SE40NJHM3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Tape & Reel (TR)
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Technische Details SE40NJHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DFN3820A, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 24pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 2-VDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SE40NJHM3/I nach Preis ab 0.22 EUR bis 0.83 EUR
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SE40NJHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DFN3820A Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DFN3820A Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 24pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN |
auf Bestellung 14300 Stücke: Lieferzeit 10-14 Tag (e) |
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SE40NJHM3/I | Vishay Semiconductors |
Rectifiers RECT 600V 4A SM STD RCOVR |
auf Bestellung 13563 Stücke: Lieferzeit 10-14 Tag (e) |
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| SE40NJHM3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
| SE40NJHM3/I |
|
Hersteller: Vishay Semiconductors
Rectifiers RECT 600V 4A SM STD RCOVR
Rectifiers RECT 600V 4A SM STD RCOVR
auf Bestellung 13563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.32 EUR |
| 5000+ | 0.28 EUR |
| 10000+ | 0.22 EUR |