SE40PJHM3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 2.4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.2 µs, Technology: Standard, Capacitance @ Vr, F: 28pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.