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SE50PAGHM3/I

SE50PAGHM3/I Vishay General Semiconductor - Diodes Division

se50pab.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 12900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
27+ 0.67 EUR
100+ 0.47 EUR
500+ 0.36 EUR
1000+ 0.3 EUR
2000+ 0.26 EUR
5000+ 0.25 EUR
Mindestbestellmenge: 23
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Technische Details SE50PAGHM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 400V 5A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 32pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Qualification: AEC-Q101.

Weitere Produktangebote SE50PAGHM3/I nach Preis ab 0.29 EUR bis 0.84 EUR

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SE50PAGHM3/I SE50PAGHM3/I Hersteller : Vishay General Semiconductor se50pab.pdf Rectifiers 5A, 400V, ESD PROTECTION, SMPA
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.84 EUR
10+ 0.72 EUR
100+ 0.54 EUR
500+ 0.43 EUR
1000+ 0.3 EUR
14000+ 0.29 EUR
Mindestbestellmenge: 4
SE50PAGHM3/I SE50PAGHM3/I Hersteller : Vishay General Semiconductor - Diodes Division se50pab.pdf Description: DIODE GEN PURP 400V 5A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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