SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 600V 5A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 13974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 2000+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
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Technische Details SE50PAJ-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 32pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
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