SE70PG-M3/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2.9A TO277A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.6 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Technische Details SE70PG-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2.9A TO277A, Current - Reverse Leakage @ Vr: 20 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 2.9A, Capacitance @ Vr, F: 76pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.6 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
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