SEMiX904GB126HDS
Produktcode: 117171
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote SEMiX904GB126HDS nach Preis ab 657.02 EUR bis 748.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| SEMIX904GB126HDS 27890720 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Electrical mounting: Press-Fit; screw Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 1.2kA Application: for UPS; Inverter; photovoltaics Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: SEMiX® 4s Gate-emitter voltage: ±20V Collector current: 600A Topology: IGBT half-bridge; thermistor |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SEMIX904GB126HDS 27890720 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Electrical mounting: Press-Fit; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SEMiX® 4s
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: IGBT half-bridge; thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Electrical mounting: Press-Fit; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SEMiX® 4s
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: IGBT half-bridge; thermistor
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 748.91 EUR |
| 2+ | 657.02 EUR |



