Technische Details SF1008G
Description: DIODE GEN PURP 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote SF1008G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SF1008G | Hersteller : Taiwan Semiconductor | Diode Switching 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||
SF1008G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
||
SF1008G | Hersteller : Taiwan Semiconductor | Rectifiers 35ns, 10A, 600V, Super Fast Recovery Rectifier |
Produkt ist nicht verfügbar |