SF2008PT Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 5+ | 3.57 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.42 EUR |
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Technische Details SF2008PT Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A TO247AD, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-247AD (TO-3P), Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
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auf Bestellung 8600 Stücke: Lieferzeit 21-28 Tag (e) |