SF68G YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 150A; R6; Ufmax: 1.7V
Mounting: THT
Max. forward voltage: 1.7V
Load current: 6A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Kind of package: tape
Case: R6
Features of semiconductor devices: glass passivated; superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 35ns
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 315+ | 0.23 EUR |
| 350+ | 0.2 EUR |
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Technische Details SF68G YANGJIE TECHNOLOGY
Description: DIODE GEN PURP 6A 600V DO-201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote SF68G nach Preis ab 0.2 EUR bis 1.09 EUR
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SF68G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 150A; R6; Ufmax: 1.7V Mounting: THT Max. forward voltage: 1.7V Load current: 6A Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Kind of package: tape Case: R6 Features of semiconductor devices: glass passivated; superfast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 35ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 355 Stücke: Lieferzeit 7-14 Tag (e) |
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SF68G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 6A 600V DO-201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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SF68G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 6A 600V DO-201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 2049 Stücke: Lieferzeit 10-14 Tag (e) |
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SF68G | Hersteller : Taiwan Semiconductor |
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| SF68G | Hersteller : TAIWAN SEMICONDUCTOR |
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SF68G | Hersteller : Taiwan Semiconductor |
Rectifiers 35ns, 6A, 600V, Super Fast Recovery Rectifier |
Produkt ist nicht verfügbar |