SFT1431-TL-W onsemi
Hersteller: onsemi
Description: MOSFET N-CH 35V 11A DPAK/TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: DPAK/TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 643+ | 0.71 EUR |
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Technische Details SFT1431-TL-W onsemi
Description: MOSFET N-CH 35V 11A DPAK/TP-FA, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Drain to Source Voltage (Vdss): 35 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK/TP-FA, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta).
Weitere Produktangebote SFT1431-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SFT1431-TL-W | onsemi |
Description: MOSFET N-CH 35V 11A DPAK/TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Drain to Source Voltage (Vdss): 35 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: DPAK/TP-FA Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SFT1431-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 35V 11A DPAK/TP-FA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Description: MOSFET N-CH 35V 11A DPAK/TP-FA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 35 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH