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SFT1450-H

SFT1450-H onsemi

SFT1450.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 21A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
auf Bestellung 18500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
833+0.6 EUR
Mindestbestellmenge: 833
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Technische Details SFT1450-H onsemi

Description: MOSFET N-CH 40V 21A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V, Power Dissipation (Max): 1W (Ta), 23W (Tc), Supplier Device Package: IPAK/TP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V.

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SFT1450-H SFT1450-H Hersteller : ONSEMI ONSMS35545-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - SFT1450-H - SFT1450-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 18500 Stücke:
Lieferzeit 14-21 Tag (e)
SFT1450-H SFT1450-H Hersteller : onsemi SFT1450.pdf Description: MOSFET N-CH 40V 21A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
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