SGB07N120ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 16.5A TO263-3-2
Power - Max: 125 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16.5 A
Part Status: Last Time Buy
Gate Charge: 70 nC
Test Condition: 800V, 8A, 47Ohm, 15V
Switching Energy: 1mJ
Td (on/off) @ 25°C: 27ns/440ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details SGB07N120ATMA1 Infineon Technologies
Description: IGBT NPT 1200V 16.5A TO263-3-2, Power - Max: 125 W, Current - Collector Pulsed (Icm): 27 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 16.5 A, Part Status: Last Time Buy, Gate Charge: 70 nC, Test Condition: 800V, 8A, 47Ohm, 15V, Switching Energy: 1mJ, Td (on/off) @ 25°C: 27ns/440ns, IGBT Type: NPT, Supplier Device Package: PG-TO263-3-2, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| SGB07N120ATMA1 | Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SGB07N120ATMA1 |
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Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

