Technische Details SGB10N60A INFINEON
Description: IGBT, 20A, 600V, N-CHANNEL, Packaging: Bulk, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/178ns, Switching Energy: 320µJ, Test Condition: 400V, 10A, 25Ohm, 15V, Gate Charge: 52 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 92 W.
Weitere Produktangebote SGB10N60A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SGB10N60A Produktcode: 44293
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller : Infineon |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: PG-TO-263-3-2 Vces: 600 V Vce: 2,3 V Ic 25: 20 A Ic 100: 10 A Pd 25: 92 W |
Produkt ist nicht verfügbar
|
||
 |
SGB10N60A | Hersteller : Infineon Technologies |
Description: IGBT, 20A, 600V, N-CHANNEL Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 28ns/178ns Switching Energy: 320µJ Test Condition: 400V, 10A, 25Ohm, 15V Gate Charge: 52 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 92 W |
Produkt ist nicht verfügbar |
|
 |
SGB10N60A | Hersteller : Infineon Technologies |
IGBTs FAST IGBT NPT TECH 600V 10A |
Produkt ist nicht verfügbar |