Technische Details SGB15N120ATMA1 Infineon
Description: IGBT 1200V 30A 198W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 18ns/580ns, Switching Energy: 1.9mJ, Test Condition: 800V, 15A, 33Ohm, 15V, Gate Charge: 130 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 198 W.
Weitere Produktangebote SGB15N120ATMA1
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SGB15N120ATMA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 1200V 30A 198000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SGB15N120ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT 1200V 30A 198W TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 18ns/580ns Switching Energy: 1.9mJ Test Condition: 800V, 15A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 52 A Power - Max: 198 W |
Produkt ist nicht verfügbar |