SGB15N60HSATMA1 Infineon Technologies
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 219+ | 2.12 EUR |
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Technische Details SGB15N60HSATMA1 Infineon Technologies
Description: IGBT NPT 600V 27A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 13ns/209ns, Switching Energy: 530µJ, Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 80 nC, Current - Collector (Ic) (Max): 27 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 138 W.
Weitere Produktangebote SGB15N60HSATMA1 nach Preis ab 2.41 EUR bis 2.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SGB15N60HSATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 27A 138000mW 3-Pin(2+Tab) D2PAK |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SGB15N60HSATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - SGB15N60HSATMA1 - SGB15N60HS HIGH SPEED IGBT IN NPT-TECHN tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SGB15N60HSATMA1 | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 27A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 13ns/209ns Switching Energy: 530µJ Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 138 W |
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