SGD04N60BUMA1 Infineon Technologies
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 503+ | 0.98 EUR |
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Technische Details SGD04N60BUMA1 Infineon Technologies
Description: IGBT 600V 9.4A 50W TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A, Supplier Device Package: PG-TO252-3-11, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/237ns, Switching Energy: 131µJ, Test Condition: 400V, 4A, 67Ohm, 15V, Gate Charge: 24 nC, Current - Collector (Ic) (Max): 9.4 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 19 A, Power - Max: 50 W.
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SGD04N60BUMA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 9.4A 50000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SGD04N60BUMA1 | Hersteller : Infineon Technologies |
Description: IGBT 600V 9.4A 50W TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Supplier Device Package: PG-TO252-3-11 IGBT Type: NPT Td (on/off) @ 25°C: 22ns/237ns Switching Energy: 131µJ Test Condition: 400V, 4A, 67Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 9.4 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 19 A Power - Max: 50 W |
Produkt ist nicht verfügbar |