SGL50N60RUFDTU===
Hersteller:
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SGL50N60RUFDTU===
Description: IGBT 600V 80A TO264-3, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A, Supplier Device Package: TO-264-3, Td (on/off) @ 25°C: 26ns/66ns, Switching Energy: 1.68mJ (on), 1.03mJ (off), Test Condition: 300V, 50A, 5.9Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 250 W.
Weitere Produktangebote SGL50N60RUFDTU===
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SGL50N60RUFDTU | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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SGL50N60RUFDTU | Hersteller : onsemi |
Description: IGBT 600V 80A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A Supplier Device Package: TO-264-3 Td (on/off) @ 25°C: 26ns/66ns Switching Energy: 1.68mJ (on), 1.03mJ (off) Test Condition: 300V, 50A, 5.9Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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SGL50N60RUFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 100W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 100W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |