SGP13N60UFDTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 13A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
| Anzahl | Preis |
|---|---|
| 157+ | 2.86 EUR |
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Technische Details SGP13N60UFDTU Fairchild Semiconductor
Description: IGBT 600V 13A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 20ns/70ns, Switching Energy: 85µJ (on), 95µJ (off), Test Condition: 300V, 6.5A, 50Ohm, 15V, Gate Charge: 25 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 60 W.
Weitere Produktangebote SGP13N60UFDTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SGP13N60UFDTU | Hersteller : ONSEMI |
Description: ONSEMI - SGP13N60UFDTU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9879 Stücke: Lieferzeit 14-21 Tag (e) |