SGP13N60UFDTU

SGP13N60UFDTU Fairchild Semiconductor


FAIRS27474-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: IGBT 600V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
auf Bestellung 16300 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
229+2.13 EUR
Mindestbestellmenge: 229
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Technische Details SGP13N60UFDTU Fairchild Semiconductor

Description: IGBT 600V 13A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 20ns/70ns, Switching Energy: 85µJ (on), 95µJ (off), Test Condition: 300V, 6.5A, 50Ohm, 15V, Gate Charge: 25 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 60 W.

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SGP13N60UFDTU Hersteller : ONSEMI FAIRS27474-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - SGP13N60UFDTU - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9879 Stücke:
Lieferzeit 14-21 Tag (e)
SGP13N60UFDTU SGP13N60UFDTU Hersteller : ON Semiconductor 1067860969511941sgp13n60ufd.pdf Trans IGBT Chip N-CH 600V 13A 60000mW 3-Pin(3+Tab) TO-220 Rail
Produkt ist nicht verfügbar
SGP13N60UFDTU SGP13N60UFDTU Hersteller : onsemi SGP13N60UFD.pdf Description: IGBT 600V 13A 60W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar