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SGP30N60HSXKSA1

SGP30N60HSXKSA1 Infineon Technologies


sgp_w30n60hs_rev2_2g.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin(3+Tab) TO-220AB Tube
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Technische Details SGP30N60HSXKSA1 Infineon Technologies

Description: IGBT 600V 41A 250W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: PG-TO220-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 20ns/250ns, Switching Energy: 1.15mJ, Test Condition: 400V, 30A, 11Ohm, 15V, Gate Charge: 141 nC, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 112 A, Power - Max: 250 W.

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SGP30N60HSXKSA1 SGP30N60HSXKSA1 Hersteller : Infineon Technologies SGx30N60HS.pdf Description: IGBT 600V 41A 250W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 1.15mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 141 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
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SGP30N60HSXKSA1 Hersteller : Infineon Technologies SGx30N60HS.pdf IGBT Transistors IGBT PRODUCTS
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