Technische Details SGW30N60 INF
Description: IGBT, 41A I(C), 600V V(BR)CES, N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: PG-TO247-3-21, IGBT Type: NPT, Td (on/off) @ 25°C: 44ns/291ns, Switching Energy: 640µJ (on), 650µJ (off), Test Condition: 400V, 30A, 11Ohm, 15V, Gate Charge: 140 nC, Part Status: Active, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 112 A, Power - Max: 250 W.
Weitere Produktangebote SGW30N60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SGW30N60 | Hersteller : INFINEON |
 MODULE |
auf Bestellung 200087 Stücke: Lieferzeit 21-28 Tag (e) |
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| SGW30N60 | Hersteller : XI.M.Z |
2002 TO-3P |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SGW30N60 | Hersteller : Infineon Technologies |
Description: IGBT, 41A I(C), 600V V(BR)CES, N Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO247-3-21 IGBT Type: NPT Td (on/off) @ 25°C: 44ns/291ns Switching Energy: 640µJ (on), 650µJ (off) Test Condition: 400V, 30A, 11Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 112 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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SGW30N60 | Hersteller : Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 30A |
Produkt ist nicht verfügbar |