SGW50N60HSFKSA1 Infineon Technologies
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 110+ | 4.93 EUR |
| 500+ | 4.49 EUR |
| 1000+ | 4.09 EUR |
Produktrezensionen
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Technische Details SGW50N60HSFKSA1 Infineon Technologies
Description: IGBT NPT 600V 100A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 47ns/310ns, Switching Energy: 1.96mJ, Test Condition: 400V, 50A, 6.8Ohm, 15V, Gate Charge: 179 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 416 W.
Weitere Produktangebote SGW50N60HSFKSA1 nach Preis ab 5.39 EUR bis 5.39 EUR
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SGW50N60HSFKSA1 | Hersteller : Infineon Technologies |
 Description: IGBT NPT 600V 100A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 47ns/310ns Switching Energy: 1.96mJ Test Condition: 400V, 50A, 6.8Ohm, 15V Gate Charge: 179 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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SGW50N60HSFKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 416000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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SGW50N60HSFKSA1 | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 47ns/310ns Switching Energy: 1.96mJ Test Condition: 400V, 50A, 6.8Ohm, 15V Gate Charge: 179 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
Produkt ist nicht verfügbar |
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| SGW50N60HSFKSA1 | Hersteller : Infineon Technologies |
IGBTs IGBT PRODUCTS |
Produkt ist nicht verfügbar |