SH8JC5TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: -60V DUAL PCH+PCH, SOP8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.78 EUR |
| 5000+ | 1.72 EUR |
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Technische Details SH8JC5TB1 Rohm Semiconductor
Description: -60V DUAL PCH+PCH, SOP8, POWER M, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V, Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote SH8JC5TB1 nach Preis ab 1.63 EUR bis 7.45 EUR
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SH8JC5TB1 | Hersteller : ROHM Semiconductor |
MOSFET -60V Dual Pch+Pch, SOP8, Power MOSFET |
auf Bestellung 11506 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8JC5TB1 | Hersteller : Rohm Semiconductor |
Description: -60V DUAL PCH+PCH, SOP8, POWER M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 6843 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8JC5TB1 | Hersteller : ROHM - Japan |
Tranzystor P-Channel MOSFET; 60V; 20V; 7,5A; 32mOhm; 2W; -55°C~150°C; Substitute: SH8JC5TB1; SH8JC5TB1 TSH8JC5TB1 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| SH8JC5TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -7.5A; Idm: -30A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -30A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -7.5A On-state resistance: 35mΩ Gate charge: 50nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SH8JC5TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -7.5A; Idm: -30A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -30A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -7.5A On-state resistance: 35mΩ Gate charge: 50nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |