SH8K37GZETB Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 90+ | 1.99 EUR |
| 100+ | 1.87 EUR |
| 250+ | 1.76 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.51 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
90 Stücke
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Produktbewertung abgeben
Technische Details SH8K37GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V, Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 100µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K37GZETB nach Preis ab 1.46 EUR bis 4.5 EUR
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SH8K37GZETB | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 5.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Supplier Device Package: 8-SOP |
auf Bestellung 2356 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K37GZETB | ROHM Semiconductor |
MOSFETs Transistor, 60V Nch+Nch Power MOSFET |
auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8K37GZETB |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 5.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Supplier Device Package: 8-SOP
auf Bestellung 2356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.08 EUR |
| 10+ | 2.55 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.46 EUR |
| SH8K37GZETB |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor, 60V Nch+Nch Power MOSFET
MOSFETs Transistor, 60V Nch+Nch Power MOSFET
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.5 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.49 EUR |